Field Effect Mobility of F16PcCu Films in Various Gas Atmospheres

1999 ◽  
Vol 03 (07) ◽  
pp. 667-671 ◽  
Author(s):  
HIROKAZU TADA ◽  
HIROSHI TOUDA ◽  
MASAKI TAKADA ◽  
KAZUMI MATSUSHIGE
Keyword(s):  
Carrier Density ◽  
Field Effect ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Room Temperature ◽  
Gas Adsorption ◽  
Quick Recovery ◽  
Thermally Activated ◽  
High Carrier ◽  
Gas Molecules

The electron mobility of hexadecafluorophthalocyaninato-copper ( F 16 PcCu ) films was evaluated based on field effect measurements in vacuum and in various gas atmospheres. An Arrhenius plot of the mobility showed that the carrier transport followed a thermally activated hopping mechanism with an activation energy of 0.28 eV. The mobility evaluated for freshly prepared films in ultrahigh vacuum was 2.0 × 10−3 cm 2 V −1 s −1 at room temperature. The electrical conductivity and carrier density were 4.4 × 10−5 S cm −1 and 1.4 × 1017 cm −3 respectively. The high carrier density indicated the existence of impurities acting as electron donors in the films. The field effect carrier mobility increased to 5.7 × 10−3 cm 2 V −1 s −1 in NH 3 atmosphere (100%, 1 atm) and decreased by 75% in the presence of O 2 gas (100%, 1 atm). A quick recovery of mobility was observed when the gas molecules were evacuated, indicating a low capability of gas adsorption.

scholarly journals Universal mobility characteristics of graphene originating from charge scattering by ionised impurities

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Jonathan H. Gosling ◽  
Oleg Makarovsky ◽  
Feiran Wang ◽  
Nathan D. Cottam ◽  
Mark T. Greenaway ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Carrier Density ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Analytical Models ◽  
Pristine Graphene ◽  
High Electron ◽  
Boltzmann Transport ◽  
Transport Parameters ◽  
Wide Range

AbstractPristine graphene and graphene-based heterostructures can exhibit exceptionally high electron mobility if their surface contains few electron-scattering impurities. Mobility directly influences electrical conductivity and its dependence on the carrier density. But linking these key transport parameters remains a challenging task for both theorists and experimentalists. Here, we report numerical and analytical models of carrier transport in graphene, which reveal a universal connection between graphene’s carrier mobility and the variation of its electrical conductivity with carrier density. Our model of graphene conductivity is based on a convolution of carrier density and its uncertainty, which is verified by numerical solution of the Boltzmann transport equation including the effects of charged impurity scattering and optical phonons on the carrier mobility. This model reproduces, explains, and unifies experimental mobility and conductivity data from a wide range of samples and provides a way to predict a priori all key transport parameters of graphene devices. Our results open a route for controlling the transport properties of graphene by doping and for engineering the properties of 2D materials and heterostructures.

scholarly journals Coulomb drag transistor using a graphene and MoS2 heterostructure

2020 ◽  
Vol 3 (1) ◽  
Author(s):  
Youngjo Jin ◽  
Min-Kyu Joo ◽  
Byoung Hee Moon ◽  
Hyun Kim ◽  
Sanghyup Lee ◽  
...  
Keyword(s):  
High Performance ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Passive Layer ◽  
Strong Interactions ◽  
Practical Application ◽  
Coulomb Drag ◽  
Strong Coulomb ◽  
High Carrier Mobility ◽  
High Carrier

Abstract Two-dimensional (2D) heterostructures often provide extraordinary carrier transport as exemplified by superconductivity or excitonic superfluidity. Recently, a double-layer graphene (Gr) separated by few-layered boron nitride demonstrated the Coulomb drag phenomenon: carriers in the active layer drag carriers in the passive layer. Here, we propose high-performance Gr/MoS2 heterostructure transistors operating via Coulomb drag, exhibiting a high carrier mobility (∼3700 cm2 V−1 s−1) and on/off-current ratio (∼108) at room temperature. The van der Waals gap at the Gr/MoS2 interface induces strong interactions between the interlayer carriers, whose recombination is suppressed by the Schottky barrier between p-Gr and n-MoS2, clearly distinct from the presence of insulating layers. The sign reversal of lateral voltage clearly demonstrates the Coulomb drag in carrier transport. Hole-like behavior of electrons in the n-MoS2 is observed in magnetic field, indicating strong Coulomb drag at low temperature. Our Coulomb drag transistor thus provides a shortcut for the practical application of 2D heterostructures.

Carbon-phosphide monolayer with high carrier mobility and perceptible I–V response for superior gas sensing

2020 ◽  
Vol 44 (9) ◽  
pp. 3777-3785 ◽  
Author(s):  
Deobrat Singh ◽  
Vivekanand Shukla ◽  
Pritam Kumar Panda ◽  
Yogendra Kumar Mishra ◽  
Horst-Günter Rubahn ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Adsorption Mechanism ◽  
Gas Sensing ◽  
Theoretical Calculations ◽  
First Principle ◽  
Dirac Cone ◽  
Cone Response ◽  
High Carrier Mobility ◽  
High Carrier ◽  
Gas Molecules

We introduce the first-principle theoretical calculations to understand the adsorption mechanism of different gas molecules on monolayered carbon phosphide with semi-metallic electrical conductivity and graphene-like Dirac cone response.

scholarly journals High carrier mobility of CoPc wires based field-effect transistors using bi-layer gate dielectric

AIP Advances ◽  
2013 ◽  
Vol 3 (11) ◽  
pp. 112123 ◽  
Author(s):  
Murali Gedda ◽  
Nimmakayala V. V. Subbarao ◽  
Sk. Md. Obaidulla ◽  
Dipak K. Goswami
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
High Carrier Mobility ◽  
High Carrier

scholarly journals Structure and Doping Optimization of IDT-Based Copolymers for Thermoelectrics

Polymers ◽  
2020 ◽  
Vol 12 (7) ◽  
pp. 1463
Author(s):  
Tongchao Liu ◽  
Dexun Xie ◽  
Jinjia Xu ◽  
Chengjun Pan
Keyword(s):  
Organic Semiconductors ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Room Temperature ◽  
Charge Carrier Transport ◽  
Structure Property ◽  
Polymer Backbone ◽  
Donor Acceptor ◽  
Higher Carrier Mobility ◽  
The Relationship

π-conjugated backbones play a fundamental role in determining the thermoelectric (TE) properties of organic semiconductors. Understanding the relationship between the structure–property–function can help us screen valuable materials. In this study, we designed and synthesized a series of conjugated copolymers (P1, P2, and P3) based on an indacenodithiophene (IDT) building block. A copolymer (P3) with an alternating donor–acceptor (D-A) structure exhibits a narrower band gap and higher carrier mobility, which may be due to the D-A structure that helps reduce the charge carrier transport obstacles. In the end, its power factor reaches 4.91 μW m−1 K−2 at room temperature after doping, which is superior to those of non-D-A IDT-based copolymers (P1 and P2). These results indicate that moderate adjustment of the polymer backbone is an effective way to improve the TE properties of copolymers.

Charge Effect in Organic Field-Effect Transistors - Analyzing Hall Measurements in the Accumulation Layer

2007 ◽  
Vol 31 ◽  
pp. 4-6 ◽  
Author(s):  
Harry L. Kwok
Keyword(s):  
Carrier Density ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Effective Means ◽  
Transport Layer ◽  
Trap States ◽  
Organic Field Effect Transistors ◽  
Accumulation Layer ◽  
Extract Information

Hall measurement is an effective means to measure carrier density and mobility in metals and semiconductors. This work examined the carrier mobility determined in the accumulation layer of organic field-effect transistors (OFETS) and proposed a method to explain data taken from rubrene single-crystal devices. The model was used to extract information on the trap states and the properties of the transport layer at different temperature.

High Carrier Mobility of Organic Field-Effect Transistors with a Thiophene–Naphthalene Mesomorphic Semiconductor

2007 ◽  
Vol 19 (14) ◽  
pp. 1864-1868 ◽  
Author(s):  
K. Oikawa ◽  
H. Monobe ◽  
K. Nakayama ◽  
T. Kimoto ◽  
K. Tsuchiya ◽  
...  
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
High Carrier Mobility ◽  
High Carrier

Carrier Transport through Grain Boundaries in Highly Transparent Conductive Ga-Doped ZnO Polycrystalline Films

2011 ◽  
Vol 2011 (CICMT) ◽  
pp. 000186-000192
Author(s):  
Tetsuya Yamamoto ◽  
Tetsuya Yamamoto ◽  
Yasushi Sato ◽  
Hisao Makino ◽  
Naoki Yamamoto
Keyword(s):  
Grain Boundaries ◽  
Hall Mobility ◽  
Carrier Mobility ◽  
Carrier Transport ◽  
Arc Discharge ◽  
Small Contribution ◽  
Glass Substrates ◽  
High Carrier ◽  
Doped Zno ◽  
Grain Bulk

We investigated the effects of grain boundaries on the carrier mobility of polycrystalline highly transparent conductive Ga-doped ZnO (GZO) films with thicknesses in the range from 100 to 500nm on glass substrates at a temperature of 200°C. GZO films were prepared by ion-plating deposition with DC arc discharge. A systematic study has been made of the thickness dependence of the structural, electrical and optical properties of GZO films. The full width at half maximum (FWHMω) of the (0002) rocking curve was found to decrease with increasing thickness, whereas the grain size increased with increasing thickness. The comparison of the Hall mobility with the optical mobility calculated by analysis using the simple Drude model combined with the Tauc-Lorentz model of data obtained by spectroscopic ellipsometry (SE) demonstrates that grain boundaries present a significant obstacle to free carriers in GZO films with thicknesses of up to 344nm. In 344-nm-thick GZO films with a high carrier concentration of 1.23×1021 cm−3, the Hall mobility of 29cm2/Vs is close to the optical mobility, i.e. the carrier mobility in the grain bulk. In such films, a very low resistivity of 1.87×10−4 Ωcm was obtained. This indicates the very small contribution of grain boundaries to the total resistivity of the GZO films.

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